GD150HFX65C1S Datasheet - STARPOWER

GD150HFX65C1S - IGBT

GD150HFX65C1S Features

* Low VCE(sat) Trench IGBT technology

* 6μs short circuit capability

* VCE(sat) with positive temperature coefficient

* Maximum junction temperature 175oC

* Low inductance case

* Fast & soft reverse recovery anti-parallel FWD

* Isolated copper baseplate using DBC technolo

Datasheet Details

GD150HFX65C1S

STARPOWER

173.82 KB

Igbt.

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