GD200HFQ120C2S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as electronic welder and inductive heating.
Features
- Low VCE(sat) Trench IGBT technology
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Typical Applications
- Switching mode power supply
- Inductive heating
- Electronic welder
Equivalent Circuit Schematic
IGBT Module
IGBT
©2021 STARPOWER Semiconductor Ltd.
6/27/2021
1/9
B01
IGBT Module
Absolute Maximum Ratings TC=25o C unless otherwise noted
IGBT
Symbol VCES VGES
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage Collector Current @ TC=25o C
@ TC=100o C
Pulsed Collector Current tp=1ms Maximum Power Dissipation @ Tj=175o C
Diode
Symbol VRRM IF...
