GD650HTA75P8HFT - IGBT
GD650HTA75P8HFT Features
* Low VCE(sat) Trench IGBT technology
* Low switching losses
* 6μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated copper p
