GD75HFU120C1S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as UPS and SMPS.
Features
- Low VCE(sat) NPT IGBT technology
- Low switching losses
- 10μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper baseplate using DBC technology
Equivalent Circuit Schematic
Typical Applications
- UPS
- Switching mode power supplies
- Electronic welders
©2011 STARPOWER Semiconductor Ltd.
2/25/2011
1/9
Rev.D
IGBT Module
Absolute Maximum Ratings TC=25℃ unless otherwise noted
Symbol
Description
VCES VGES
ICM(1) IF IFM PD Tj TSTG VISO Mounting
Collector-Emitter Voltage Gate-Emitter Voltage Collector Current @ TC=25℃
@ TC=80℃ Pulsed Collector Current tp=1ms Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation @ Tj=150℃...
