GD800HFA120C2S_B20 - IGBT
GD800HFA120C2S_B20 Features
* Low VCE(sat) Trench IGBT technology
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated copper baseplate using DBC technology Typical Applications
* Inver
