GD800HFX170C3S - IGBT
GD800HFX170C3S Features
* Low VCE(sat) Trench IGBT technology
* 10μs short circuit capability
* VCE(sat) with positive temperature coefficient
* Maximum junction temperature 175oC
* Low inductance case
* Fast & soft reverse recovery anti-parallel FWD
* Isolated copper baseplate using DBC technol
