GD800HTX75P4S
Description
STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit ruggedness. They are designed for the applications such as hybrid and electric vehicle.
Features
- Low VCE(sat) Trench IGBT technology
- Low switching losses
- 6μs short circuit capability
- VCE(sat) with positive temperature coefficient
- Maximum junction temperature 175o C
- Low inductance case
- Fast & soft reverse recovery anti-parallel FWD
- Isolated copper pinfin baseplate using DBC technology
Typical Applications
- Hybrid and electric vehicle
- Inverter for motor drive
- Uninterruptible power supply
Equivalent Circuit Schematic
©2020 STARPOWER Semiconductor Ltd. 12/10/2020 1/10 Preliminary
IGBT Module
Absolute Maximum Ratings TF=25o C unless otherwise noted
IGBT
Symbol VCES VGES ICN
ICM PD
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Implemented Collector Current Collector Current @ TF=25o C
@ TF=80o C Pulsed Collector Current tp=1ms Maximum...
