STC62WV25616 Datasheet | STC

.. - Features Very Low Power/Voltage CMOS SRAM 256K X 16 bit STC62WV25616 - Data retention supply voltage as low as 1.5V - Easy expansion with CE and OE options - I/O Configuration x8/x16 selectable by LB and UB pin - Wide Vcc operation voltage : 2.4~5.5V - Very low power consumption : Vcc = 3.0V C-grade: 26m A (@55ns) operating current I-grade: 27m A (@55ns) operating current C-grade: 21m A (@70ns) operating current I-grade: 22m A (@70ns) operating current 0.45u A (Typ.) CMOS standby current Vcc = 5.0V C-grade: 63m A (@55ns) operating current I-grade: 65m A (@55ns) operating current C-grade: 53m A (@70ns) operating current I-grade: 55m A (@70ns) operating current 2.0u A (Typ.) CMOS standby current - High speed access time : -55 55ns -70 70ns - Automatic power down when chip is deselected - Three state outputs and TTL patible - Fully static operation - DESCRIPTION The STC62WV25616 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 2.4V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power Features with a typical CMOS standby current of 0.45u A at 3.0V/25o C and maximum access time of 55ns at 3.0V/85o C. Easy memory expansion is provided by an active LOW chip enable (CE) ,active LOW output enable(OE) and three-state output drivers. The STC62WV25616 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The STC62WV25616 is available in DICE form, JEDEC standard 44-pin TSOP Type II package and 48-ball BGA package. - PRODUCT FAMILY PRODUCT FAMILY STC62WV25616DC STC62WV25616EC STC62WV25616AC STC62WV25616DI STC62WV25616EI STC62WV25616AI 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 OPERATING TEMPERATURE Vcc RANGE SPEED ( ns ) 55ns :3.0~5.5V 70ns :2.7~5.5V ( I CCSB1 , Max ) POWER DISSIPATION Operating STANDBY ( I CC , Max ) PKG TYPE...