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34NM60N

N-Channel MOSFET

34NM60N Features

*    72 Order code VDSS STW34NM60N 600 V RDS(on) 0.105 Ω ID PTOT 31.5 A 250 W

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistance Applications

* Switching applications Figure 1. Internal schematic diagram ' 7$%

34NM60N General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most .

34NM60N Datasheet (1.01 MB)

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Datasheet Details

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TAGS

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