36DN6F7 - Dual N-channel Power MOSFET

Datasheet Summary

Description

This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Features

Order code STL36DN6F7 VDS 60 V RDS(on) max 27 mΩ ID 33 A.
Among the lowest RDS(on) on the market.
Excellent figure of merit (FoM).
Low Crss/Ciss ratio for EMI immunity.
High avalanche ruggedness.

STMicroelectronics

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Datasheet Details

Part number	36DN6F7
Manufacturer	STMicroelectronics
File Size	754.53 KB
Description	Dual N-channel Power MOSFET
Datasheet	36DN6F7 Datasheet
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STL36DN6F7 Dual N-channel 60 V, 23 mΩ typ., 33 A STripFET™ F7 Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Figure 1: Internal schematic diagram Features Order code STL36DN6F7 VDS 60 V RDS(on) max 27 mΩ ID 33 A  Among the lowest RDS(on) on the market  Excellent figure of merit (FoM)  Low Crss/Ciss ratio for EMI immunity  High avalanche ruggedness Applications  Switching applications Description This dual N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Published: Nov 5, 2018 |