3N150
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N-channel mosfet. These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process. The result is a p
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3N150-E3 - N-CHANNEL POWER MOSFET
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
3N150-E3
3.0A, 1500V N-CHANNEL POWER MOSFET
1 TO-220
DESCRIPTION
The UTC 3N150-E3 provide excellent RDS(ON), low .
3N150S - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
3N150S
·FEATURES ·Drain Current ID= 2.5A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 1500V(Min) ·Static Drain-Source On-R.
3N152 - PWM/VFM Step-down DC/DC Converter
(RICOH electronics devices division)
.
3N153 - SILICON INSULATED GATE FIELD EFFECT TRANSISTOR
(ETC)
.
3N154 - SILICON MOS TRANSISTOR
(ETC)
.
3N155 - MOSFET SWITCHING
(Motorola)
3N155 3N156
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MOSFET SWITCHING P-CHANNEL — ENHANCEMENT
Refer to 3N157 for graphs.
MAXIMUM RATINGS
Rating Drain-So.
3N155A - P-channel Transistor
(ETC)
3N 155,A (SILICON) 3N156,A
P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching appl.
3N156 - MOSFET SWITCHING
(Motorola)
3N155 3N156
CASE 20-03, STYLE 2
TO-72 (TO-206AF)
MOSFET SWITCHING P-CHANNEL — ENHANCEMENT
Refer to 3N157 for graphs.
MAXIMUM RATINGS
Rating Drain-So.
3N156A - P-channel Transistor
(ETC)
3N 155,A (SILICON) 3N156,A
P-channel silicon nitride passivated MOS field-effect enhancement mode transistors designed for chopper and switching appl.
3N157 - MOSFET
(Motorola)
.