3N150 - N-Channel MOSFET

STMicroelectronics

Datasheet Details

These Power MOSFETs are designed using the STMicroelectronics consolidated strip-layout-based MESH OVERLAY process.

Order codes VDS RDS(on) max. ID PTOT STFW3N150 63 W STH3N150-2 1500 V 9Ω STP3N150 2.5 A 140 W STW3N150.
100% avalanche tested.
Intrinsic capacitances and Qg minimized.
High speed switching.
Fully isolated TO-3PF plastic package, creepage distance path is 5.4 mm (typ. ).

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Published: Dec 1, 2013 |