* Order code STL3NM60N RDS(on) max. 1.8 Ω ID 2.2 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resistance Application
* Switching applications Figure 1. Internal schematic diagram 4G 3 2 1S 5 6 D 7 8 Description This device
3NM60N
860.22 KB
N-channel power mosfet.
STL3NM60N
N-channel 600 V, 1.5 Ω, 2.2 A MDmesh™ II Power MOSFET in a PowerFLAT™ 3.3 x 3.3 HV package
Datasheet - production data
1 2 3
4
8 7 6
5
5.
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