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3NV04D VNS3NV04D

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Description

® VNS3NV04D “OMNIFET II”: FULLY AUTOPROTECTED POWER MOSFET TYPE RDS(on) VNS3NV04D 120 mΩ ( *) Ilim 3.5 A ( *) Vclamp 40 V ( *) ( *)P.
OThe VNS3NV04D is a device formed by two -monolithic OMNIFET II chips housed in a )standard SO-8 package.

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Features

* - OVERTEMPERATURE AND SHORT CIRCUIT During normal operation, the INPUT pin is electrically connected to the gate of the internal power MOSFET through a low impedance path. PROTECTION: these are based on sensing the chip temperature and are not dependent on the input voltage. The location of the s

Applications

* Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments. Fault feedback can be detected by monitoring the voltage at the input pin. lete P DRAIN1 bso OVERVOLTAGE O CLAMP DRAIN2 OVERVOLTAGE CLAMP INPUT1 GATE CONTROL GATE CONTROL INPUT2

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