4NF06L Datasheet, Mosfet, STMicroelectronics

4NF06L Features

• Mosfet Order code VDS RDS(on) max. ID STN4NF06L 60 V < 0.1 Ω 4A
• AEC-Q101 qualified
• Exceptional dv/dt capability
• 100% avalanche tested
• Low gate

PDF File Details

Part number:

4NF06L

Manufacturer:

STMicroelectronics ↗

File Size:

658.75kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET has been developed using STMicroelectronics' unique S(3) STripFET process, which is specifically designed to min

4NF06L Application

• Applications
• Switching applications G(1) Description This Power MOSFET has been developed using STMicroelectronics' unique S(3) STrip

TAGS

4NF06L

STMicroelectronics

📁 Related Datasheet

4NF03L - N-channel Power MOSFET (STMicroelectronics)
STN4NF03L N-channel 30 V - 0.039 Ω - 6.5 A - SOT-223 STripFET™ II Power MOSFET Features Type STN4NF03L VDSS 30 V ■ Low threshold drive RDS(on) <0.

4NF20L - N-CHANNEL Power MOSFET (STMicroelectronics)
STN4NF20L N-channel 200 V, 1.1 Ω, 1 A SOT-223 low gate charge STripFET™ II Power MOSFET Features Order code STN4NF20L VDSS 200 V RDS(on) max. < 1..

4N03L02 - Power-Transistor (Infineon)
OptiMOS®-T2 Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating .

4N041R1 - Power-Transistor (Infineon)
IPLU300N04S4-1R1 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operatin.

4N04R7 - Power-Transistor (Infineon)
IPLU300N04S4-R7 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.

4N04R8 - Power-Transistor (Infineon)
IPLU300N04S4-R8 OptiMOS™-T2 Power-Transistor Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating.

4N0603 - N-Channel MOSFET (VBsemi)
4N0603-VB TO252 4N0603-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on.

4N0607 - TO220 N-Channel MOSFET (VBsemi)
4N0607-VB TO220 4N0607-VB TO220 Datasheet N-Channel 60 V (D-S) MOSFET PRODUCT SUMMARY VDS RDS(on) VGS = 10 V ID Configuration 60 V 5 m 120 A .

4N0607 - TO252 N-Channel MOSFET (VBsemi)
4N0607-VB TO252 4N0607-VB TO252 Datasheet N-Channel 60 V (D-S) 175 °C MOSFET .VBsemi. PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V RDS(on.

4N06L23 - N-Channel MOSFET (VBsemi)
4N06L23-VB 4N06L23-VB Datasheet N-Channel 6 0-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 60 0.025 at VGS = 10 V 0.030 at VGS = 4.5 V I.