58N60DM2

N-CHANNEL MOSFET

STMicroelectronics

58N60DM2 Features

* Order code STW58N60DM2AG VDS 600 V RDS(on) max. 0.060 Ω ID 50 A PTOT 360 W 3 2 1 TO-247 Figure 1: Internal schematic diagram D(2) G(1) S(3) AM15572v1_no_tab

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and in

58N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

58N60DM2 Datasheet (722.76 KB)