74V1T08
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Single 2-input and gate. sThe 74V1T08 is an advanced high-speed CMOS bSINGLE 2-INPUT AND GATE fabricated with Osub-micron silicon gate and double-layer metal
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74V1T00 - SINGLE 2-INPUT NAND GATE
(STMicroelectronics)
®
74V1T00
SINGLE 2-INPUT NAND GATE
s s
s
s
s
s
s
s
HIGH SPEED: tPD = 5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA =.
74V1T02 - SINGLE 2-INPUT NOR GATE
(STMicroelectronics)
®
74V1T02
SINGLE 2-INPUT NOR GATE
s s
s
s
s
s
s
s
HIGH SPEED: tPD = 3.5 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA .
74V1T03 - SINGLE 2-INPUT OPEN DRAIN NAND GATE
(STMicroelectronics)
®
74V1T03
SINGLE 2-INPUT OPEN DRAIN NAND GATE
PRELIMINARY DATA
s s
s
s s
s
HIGH SPEED: tPD = 7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC .
74V1T04 - SINGLE SCHMITT INVERTER
(STMicroelectronics)
74V1T14
SINGLE SCHMITT INVERTER
s HIGH SPEED: tPD = 5.0ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA=25°C
s TYPICAL HYSTER.
74V1T05 - SINGLE INVERTER OPEN DRAIN
(STMicroelectronics)
®
74V1T05
SINGLE INVERTER (OPEN DRAIN)
PRELIMINARY DATA
s s
s
s s
s
HIGH SPEED: tPD = 6 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA .
74V1T07 - SINGLE BUFFER
(STMicroelectronics)
74V1T07
SINGLE BUFFER (OPEN DRAIN)
s HIGH SPEED: tPD = 4.3ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA=25°C s COMPATIBLE WIT.
74V1T125 - SINGLE BUS BUFFER 3-STATE
(STMicroelectronics)
®
74V1T125
SINGLE BUS BUFFER (3-STATE)
s s
s
s
s
s
s
s
HIGH SPEED: tPD = 3.8 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) a.
74V1T126 - SINGLE BUS BUFFER
(STMicroelectronics)
74V1T126
SINGLE BUS BUFFER (3-STATE)
s HIGH SPEED: tPD = 3.6ns (TYP.) at VCC = 5V s LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA=25°C s COMPATIBLE W.
74V1T14 - SINGLE SCHMITT INVERTER
(STMicroelectronics)
®
74V1T14
SINGLE SCHMITT INVERTER
s s
s s s
s
s
s
HIGH SPEED: tPD = 4.7 ns (TYP.) at VCC = 5V LOW POWER DISSIPATION: ICC = 1 µA (MAX.) at TA = .
74V1T32 - SINGLE 2-INPUT OR GATE
(STMicroelectronics)
74V1T32
SINGLE 2-INPUT OR GATE
s HIGH SPEED: tPD = 4.5ns (TYP.) at VCC = 5V
s LOW POWER DISSIPATION:
ICC = 1µA(MAX.) at TA=25°C
s COMPATIBLE WITH.