Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5
technology based on an innovative proprietary vertical structure.The result is a
S(3)
AM01476v1_No_tab dramatic reduction in on-resistance and ultra-low gate charge for applications
requiring superior power density and high efficiency.Product status STF7N90K5
Product summary
Order code
STF7N90K5
Marking
7N90K5
Package
TO-220FP
Packing
Tube
DS11868 - Rev 2 - February 2018 For further information contact y
Features
- Order code
VDS
RDS(on ) max. ID
STF7N90K5
900 V
0.81 Ω
7A
23 1 TO-220FP D(2).
- Industry’s lowest RDS(on) x area.
- Industry’s best FoM (figure of merit).
- Ultra-low gate charge.
- 100% avalanche tested.
- Zener-protected.
7N90K5-STMicroelectronics.pdf
