7NC80ZFP Datasheet - STMicroelectronics

STP7NC80ZFP

7NC80ZFP Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In this respect the Zener volta

7NC80ZFP General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large varie.

7NC80ZFP Datasheet (455.89 KB)

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7NC80ZFP

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STMicroelectronics ↗

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455.89 KB

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stp7nc80zfp.
STP7NC80Z - STP7NC80ZFP STB7NC80Z - STB7NC80Z-1 N-CHANNEL 800V - 1.3Ω - 6.5A TO-220/FP/D2PAK/I2PAK Zener-Protected PowerMESH™III MOSFET TYPE STP7NC80Z.

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7NC80ZFP Features

7NC80ZFP General Description

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