86N3LLH6 Datasheet - STMicroelectronics

86N3LLH6 N-channel MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Order code STL86N3LLH6AG Table 1: Device summary Marking Package 86N3LLH6 PowerFLATTM 5x6 Packing Tape a.

86N3LLH6 Features

* Order code STL86N3LLH6AG VDS 30 V RDS(on) max. 5.2 mΩ ID 80 A

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level

* Wettable flank package Applications

* Switching applications

86N3LLH6 Datasheet (800.00 KB)