8DN6LF6 - N-channel Power MOSFET

STMicroelectronics

Datasheet Details

Part number	8DN6LF6
Manufacturer	STMicroelectronics ↗
File Size	311.06 KB
Description	N-channel Power MOSFET
Datasheet	8DN6LF6-STMicroelectronics.pdf

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure.

Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6).
AEC-Q101 qualified.
Very low on-resistance.
Very low gate charge.
High avalanche ruggedness.
Low gate drive power loss.
Logic level G1(2) G2(4).

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Published: Sep 28, 2023 |