8DN6LF6 Datasheet - STMicroelectronics

N-channel Power MOSFET

8DN6LF6 Features

* Order code VDS RDS(on) max. ID 4 1 STS8DN6LF6AG 60 V 24 mΩ 8A SO-8 D1(7, 8) D2(5, 6)

* AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss

* Logic level G1(2) G2(4) A

8DN6LF6 General Description

This device is a dual N-channel Power MOSFET developed using the STripFET F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS8DN6LF6AG Product summary Order code STS8DN6LF6AG Marking 8DN6LF6 Package SO.

8DN6LF6 Datasheet (311.06 KB)