8N80K5 Datasheet - STMicroelectronics

8N80K5 N-channel Power MOSFET

These very high voltage N-channel Power MOSFETs are designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. S(3) A.

8N80K5 Features

* Order codes STF8N80K5 STFI8N80K5 VDS RDS(on)max. 800 V 0.95 Ω ID 6A PTOT 25 W

* Industry’s lowest RDS(on) x area

* Industry’s best figure of merit (FoM)

* Ultra low gate charge

* 100% avalanche tested

* Zener-protected Figure 1. Internal schematic diagra

8N80K5-STMicroelectronics.pdf