Datasheet Details
Part number:
AM2931-110
Manufacturer:
File Size:
60.75 KB
Description:
S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
AM2931-110 RF & MICROWAVE TRANSISTORS S-BAND RADAR APPLICATIONS .
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REFRACTORY/GOLD METALLIZATION EMITTER SITE BALLASTED 3:1 VSWR CAPABILITY LOW THERMAL RESISTANCE INPUT/OUTPUT MATCHING OVERLAY GEOMETRY METAL/CERAMIC HERMETIC PACKAGE POUT = 105 W MIN.
WITH 6.2 dB GAIN .400 x .500 2L S
AM2931-110_STMicroelectronics.pdf
AM2931-110, S-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS
The AM2931-110 is a high power silicon bipolar NPN transistor specifically designed for S-Band radar pulsed output and driver applications.
This device is capable of operation over a wide range of pulse widths, duty cycles and temperatures and can withstand a 3:1 output VSWR.
Low RF thermal resistan
AM2931-110 Distributor
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