BAT49
DESCRIPTION
General purpose metal to silicon diode featuring very low turn-on voltage and fast switching. This device has integrated protection against excessive voltage such as electrostatic discharges. ABSOLUTE RATINGS (limiting values)
Symbol VRRM IF IFRM IFSM Tstg Tj TL Parameter Repetitive Peak Reverse Voltage Forward Continuous Current- Repetitive Peak Forward Current- Surge non Repetitive Forward Current- Storage and Junction Temperature Range Maximum Lead Temperature for Soldering during 10s at 4mm from Case Ta = 70 °C tp = 1s δ ≤ 0.5 tp ≤ 10ms
DO 41 (Glass)
Value 80 500 3 10
- 65 to 150
- 65 to 125 230
Unit V m A A A °C °C °C
THERMAL RESISTANCE
Symbol Rth(j-a) Junction-ambient- Test Conditions Value 110 Unit °C/W
ELECTRICAL CHARACTERISTICS STATIC CHARACTERISTICS
Symbol IR
- - VF
- - Tj = 25°C Tj = 25°C Tj = 25°C Tj = 25°C Test Conditions VR = 80V IF = 10m A IF = 100m A IF = 1A Min. Typ. Max. 200 0.32 0.42 1 Unit µA V
DYNAMIC CHARACTERISTICS
Symbol C Tj = 25°C Test...
