CB45000 Datasheet, Cells, STMicroelectronics

CB45000 Features

• Cells s s s s s s s s s s s 0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor

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CB45000

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STMicroelectronics ↗

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📄 Datasheet

Description:

Hcmos6 standard cells. The CB45000 standard cell series uses a high performance, low voltage, 5 level metal, HCMOS6 0.35 micron process to achieve subnanose

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CB45000

STMicroelectronics

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