Description
The CB45000 standard cell series uses a high performance, low voltage, 5 level metal, HCMOS6 0.35 micron process to achieve subnanosecond internal speeds while offering very low power dissipation and high noise immunity.
Features
- s
s s s
s
s s s
s s s
0.35 micron 5 layer metal HCMOS6 process, retrograde well technology, low resistance salicided active areas and polysilicide gates. 3.3 V optimized transistor with 5 V I/O interface capability 2 - input NAND delay of 160 ps (typ) with fanout = 2. Broad I/O functionality including Low Voltage CMOS, Low Voltage TTL and LVDS. Driving capability to ISA, EISA, PCI, MCA, and SCSI interface levels High drive I/O; capability of sinking up to 24 mA with slew rate control, curre.
CB45000_STMicroelectronics.pdf
