DALC112S1 Datasheet, Protection, STMicroelectronics

DALC112S1 Features

• Protection ARRAYOF 12 DIODESFOR ESDPROTECTION. PEAK REVERSE VOLTAGE VRRM= 18V PER DIODE. VERYLOWCAPACITANCE PERDIODE: C <5pF. VERY LOW LEAKAGE CURRENT : IR < 2 µA. I/O 1 SO8 FUNCTIONAL DIAGRAM

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DALC112S1

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STMicroelectronics ↗

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📄 Datasheet

Description:

Low capacitance diode array for esd protection. ARRAY of 12 diodes configured by cells of 2 diodes, each cell being used to protect signal line from transient overvoltages by clampi

DALC112S1 Application

• Applications Where ESD protection for high speed datalines is required : LAN / WAN equipment Computer I/O Graphic video port Set top box I/O DESCRI

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DALC112S1

STMicroelectronics

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