F15NM60N - N-Channel Power MOSFET
This series of devices implements the second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high effi
F15NM60N Features
* Type VDSS (@Tjmax) RDS(on) ID STB15NM60N STI15NM60N STF15NM60N STP15NM60N STW15NM60N 650V 650V 650V 650V 650V < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω < 0.299Ω 14A 14A 14A (1) 14A 14A 1. Limited only by maximum temperature allowed
* 100% avalanche tested
* Low input capacitance and gate
