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F21NM50N Datasheet - STMicroelectronics

F21NM50N STF21NM50N

- OThe devices are realized with the second )generation of MDmesh Technology. This t(srevolutionary Power MOSFET associates a new cvertical structure to the company's strip layout to uyield one of the world's lowest on-resistance and dgate charge. It is therefore suitable for the most rodemanding hi.

F21NM50N Features

* Type VDSS (@Tjmax) RDS(on) ID STB21NM50N )STB21NM50N-1 t(sSTF21NM50N cSTP21NM50N uSTW21NM50N 550V 550V 550V 550V 550V < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω < 0.19Ω 18A 18A 18A(1) 18A 18A rod1. Limited by wire bonding P

* 100% avalanche tested te

* Low input capacitance and gate charge le

F21NM50N Datasheet (448.99 KB)

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