G15M65DF2 - Trench gate field-stop IGBT
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.
The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential.
Furthermore,
G15M65DF2 Features
* 6 μs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 15 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Soft and very fast recovery antiparallel diode
* Maximum junction te
