* 6 μs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ.) @ IC = 15 A
* Tight parameter distribution
* Safer paralleling
* Positive VCE(sat) temperature coefficient
* Low thermal resistance
* Soft and very fast recovery antiparallel diode
* Maximum junction te
G15M65DF2 Datasheet (915.56 KB)
G15M65DF2
915.56 KB
Trench gate field-stop igbt.
STGB15M65DF2
Trench gate field-stop IGBT M series, 650 V, 15 A low-loss in a D²PAK package
Datasheet - production data
TAB
2 3
1
D²PAK
Figure 1: Int.
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