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G15M65DF2 - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	G15M65DF2
Manufacturer	STMicroelectronics ↗
File Size	915.56 KB
Description	Trench gate field-stop IGBT
Datasheet	G15M65DF2-STMicroelectronics.pdf

G15M65DF2 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

6 μs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 15 A.
Tight parameter distribution.
Safer paralleling.
Positive VCE(sat) temperature coefficient.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.
Maximum junction temperature: TJ = 175 °C.

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Published: Jan 21, 2019 |