G4M65DF2 Trench gate field-stop IGBT

STMicroelectronics

Description

STGB4M65DF2 Trench gate field-stop IGBT, M series 650 V, 4 A low loss Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic diag.
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: G4M65DF2
Manufacturer: STMicroelectronics ↗
File Size: 416.53 KB
Datasheet: G4M65DF2-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

Features

* 6 µs of short-circuit withstand time
* VCE(sat) = 1.6 V (typ. ) @ IC = 4 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resistance

Applications

* Motor control
* UPS

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