G6M65DF2 Trench gate field-stop IGBT

STMicroelectronics

Description

STGD6M65DF2 Trench gate field-stop IGBT, M series 650 V, 6 A low loss Datasheet - production data Figure 1: Internal schematic diagram .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

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Datasheet Specifications

Part number: G6M65DF2
Manufacturer: STMicroelectronics ↗
File Size: 709.46 KB
Datasheet: G6M65DF2-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

Features

* 6 µs of short-circuit withstand time
* VCE(sat) = 1.55 V (typ. ) @ IC = 6 A
* Tight parameter distribution
* Safer paralleling
* Low thermal resistance

Applications

* Motor control
* UPS

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