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G6M65DF2 - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number: G6M65DF2
Manufacturer: STMicroelectronics ↗
File Size: 709.46 KB
Datasheet: G6M65DF2-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

G6M65DF2 Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

6 µs of short-circuit withstand time.
VCE(sat) = 1.55 V (typ. ) @ IC = 6 A.
Tight parameter distribution.
Safer paralleling.
Low thermal resistance.
Soft and very fast recovery antiparallel diode.

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Published: Jan 21, 2019 |