GD10HF60KD Datasheet - STMicroelectronics

GD10HF60KD short-circuit rugged IGBT

This device utilizes the advanced PowerMESH™ process for the IGBT and the Turbo 2 Ultrafast high voltage technology for the diode. The combination results in a very good trade-off between conduction losses and switching behavior rendering the product ideal for diverse high voltage applications opera.

GD10HF60KD Features

* Designed for automotive applications and AEC-Q101 qualified

* Low on-voltage drop (VCE(sat))

* Low Cres / Cies ratio (no cross conduction susceptibility)

* Switching losses include diode recovery energy

* Short-circuit rated

* Very soft Ultrafast rec

GD10HF60KD-STMicroelectronics.pdf