GF7NB60SL

IGBT

STMicroelectronics

GF7NB60SL Features

* TYPE VCES VCE(sat) (Max) IC @25°C @100°C STGF7NB60SL 600 V < 1.6 V 7A s POLYSILICON GATE VOLTAGE DRIVEN s LOW THRESHOLD VOLTAGE s LOW ON-VOLTAGE DROP s LOW GATE CHARGE s HIGH CURRENT CAPABILITY DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroel

GF7NB60SL General Description

Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “S” identifies a family optimized achieve minimum on-voltage drop for low frequency applications (<1.

GF7NB60SL Datasheet (203.39 KB)