Part number:
GW60V60DF
Manufacturer:
File Size:
1.56 MB
Description:
Trench gate field-stop igbt.
GW60V60DF-STMicroelectronics.pdf
Datasheet Details
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.
These devices are part of the V series of IGBTs, which represents an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore,
GW60V60DF Features
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 60 A
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi
GW60V60DF-STMicroelectronics.pdf
Datasheet Details
GW60V60DF
1.56 MB
Trench gate field-stop igbt.
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