GW60V60DF Trench gate field-stop IGBT

STMicroelectronics

Description

STGW60V60DF, STGWA60V60DF STGWT60V60DF Trench gate field-stop IGBT, V series 600 V, 60 A very high speed Datasheet - production data 3 2 1 TO-247 TAB.
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure.

📥 Download Datasheet

GW60V60DF Datasheet Preview — Preview of GW60V60DF PDF

Datasheet Specifications

Part number: GW60V60DF
Manufacturer: STMicroelectronics ↗
File Size: 1.56 MB
Datasheet: GW60V60DF-STMicroelectronics.pdf
Description: Trench gate field-stop IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ. ) @ IC = 60 A
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode 3 2 1 TO-3P Fi

Applications

* Photovoltaic inverters
* Uninterruptible power supply
* Welding
* Power factor correction

GW60V60DF Distributors

📁 Related Datasheet

GW6203 GW64x32C-K610A GW6BGS27ED GW6BGS30ED GW6BGS40ED GW6BGS50ED

📌 All Tags

GW60V60DF Trench gate field-stop IGBT STMicroelectronics

STMicroelectronics GW60V60DF-like datasheet