L6386E - High voltage high and low-side driver

STMicroelectronics

L6386E Datasheet Preview — Preview of L6386E PDF

Datasheet Details

Part number	L6386E
Manufacturer	STMicroelectronics ↗
File Size	373.70 KB
Description	High voltage high and low-side driver
Datasheet	L6386E-STMicroelectronics.pdf

L6386E Product details

Description

The L6386E is a high voltage gate driver, manufactured with the BCD™ “offline” technology, and able to drive simultaneously one high and one low-side power MOSFET or IGBT device.

Features

High voltage rail up to 600 V.
dV/dt immunity ± 50 V/nsec in full temperature range.
Driver current capability:.
400 mA source.
650 mA sink.
Switching times 50/30 nsec rise/fall with 1 nF load.
CMOS/TTL Schmitt trigger inputs with hysteresis and pull-down.
Undervoltage lockout on lower and upper driving section.
Integrated bootstrap diode.
Outputs in phase with inputs.

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Published: Jan 7, 2019 |