MD2103DFP Datasheet - STMicroelectronics

MD2103DFP High voltage NPN power transistor

The MD2103DFP is manufactured using diffused collector in planar technology adopting new and enhanced high voltage structure. The new MD product series show improved silicon efficiency briging updated performance to the horizontal deflection stage. RBE=65Ω (typ) Table 1. Device summary Marking MD.

MD2103DFP Features

* State-of-the-art technology:

* Diffused collector “enhanced generation” Stable performance versus operating temperature variation Low base drive requirement Tight hFE range at operating collector current Fully insulated power package UL compliant Integrat

MD2103DFP_STMicroelectronics.pdf