RF5L05950CF2 - RF power LDMOS transistor

STMicroelectronics

RF5L05950CF2 Datasheet Preview — Preview of RF5L05950CF2 PDF

Datasheet Details

Part number	RF5L05950CF2
Manufacturer	STMicroelectronics ↗
File Size	722.49 KB
Description	RF power LDMOS transistor
Datasheet	RF5L05950CF2-STMicroelectronics.pdf

RF5L05950CF2 Product details

Description

The RF5L05950CF2 is a 950 W, 50 V, high performance, unmatched LDMOS FET, designed for wideband commercial and industrial applications in the frequency range from HF to 500 MHz.

Features

Order code Frequency VDD POUT Gain Efficiency RF5L05950CF2(1) 108 MHz 50 V 2000 W 20 dB 76% 1. Measured on 88-108 MHz wideband test board with two RF5L05950CF2 devices connected in push-pull.
High efficiency and linear gain operations.
Integrated ESD protection.
Large positive and negative gate-source voltage range for improved class C operation.
Excellent thermal stability, low HCI drift.
In compliance with the european directive 2002/95.

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Published: Mar 23, 2023 |