S6NF20V

N-channel MOSFET

STMicroelectronics

S6NF20V Features

* Order code VDS RDS(on) max. ID 4 1 STS6NF20V 40 mΩ (@4.5 V) 20 V 6A 45 mΩ (@2.7 V) SO-8 1 S 2 S 8 D 7 D

* Ultra low threshold gate drive

* 100% avalanche tested

* Low gate charge Applications

* Switching applications S 3 G 4 6 D D 5 Description Th

S6NF20V General Description

This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and compu.

S6NF20V Datasheet (342.95 KB)