STB40N60M2 Datasheet - STMicroelectronics

STB40N60M2 N-CHANNEL MOSFET

* 6 AM01476v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gat.

STB40N60M2 Features

* Order codes VDS @ TJmax RDS(on) max ID STB40N60M2 STP40N60M2 650 V 0.088 Ω 34 A STW40N60M2

* Extremely low gate charge

* Lower RDS(on) x area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected Figure 1. Internal

STB40N60M2 Datasheet (1.07 MB)