STD16N65M2

N-channel Power MOSFET

STMicroelectronics

STD16N65M2 Features

* Order code VDS at TJ max. RDS(on) max. ID STD16N65M2 710 V 360 mΩ 11 A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected Applications

* Switching applications Description AM0147

STD16N65M2 General Description

AM01476v1_tab This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency co.

STD16N65M2 Datasheet (781.44 KB)