STD170N4F7AG Datasheet - STMicroelectronics

STD170N4F7AG N-channel Power MOSFET

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD170N4F7AG AM01475v1_no Tab_noZen Table 1.

STD170N4F7AG Features

* Order code VDS RDS(on) max. ID PTOT STD170N4F7AG 40 V 2.8 mΩ 80 A 172 W

* AEC-Q101 qualified

* Among the lowest RDS(on) on the market

* Excellent FoM (figure of merit)

* Low Crss/Ciss ratio for EMI immunity

* High avalanche ruggedness Applications

* Switching applications

STD170N4F7AG-STMicroelectronics.pdf