STD18N60M6

N-Channel Power MOSFET

STMicroelectronics

STD18N60M6 Features

* TAB 23 1 DPAK D(2, TAB) Order code VDS RDS(on) max. ID STD18N60M6 600 V 280 mΩ 13 A

* Reduced switching losses

* Lower RDS(on) per area vs previous generation

* Low gate input resistance

* 100% avalanche tested

* Zener-protected G(1) Applicati

STD18N60M6 General Description

The new MDmesh M6 technology incorporates the most recent advancements to the well-known and consolidated MDmesh family of SJ MOSFETs. STMicroelectronics builds on the previous generation of MDmesh devices through its new M6 technology, which combines excellent RDS(on) per area improvement with one.

STD18N60M6 Datasheet (501.28 KB)