STD30N6LF6AG Datasheet (STMicroelectronics)

STD30N6LF6AG, N-CHANNEL POWER MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

Order code STD30N6LF6AG AM01475v1_Tab Table 1: Device summary Marking Package 30N6LF6 DPAK Packing Tape

STD30N6LF6AG Features

* Order code VDS RDS(on) max. ID PTOT STD30N6LF6AG 60 V 25 mΩ 24 A 40 W

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications