STD7ANM60N Datasheet (STMicroelectronics)

STD7ANM60N, N-channel Power MOSFET

* 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

It is therefore suita

STD7ANM60N Features

* TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A

* Designed for automotive applications and AEC-Q101 qualified

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistanc