STD95P3LLH6AG Datasheet - STMicroelectronics

STD95P3LLH6AG P-CHANNEL POWER MOSFET

This device is a P-channel Power MOSFET developed using the STripFET™ H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. AM11258v1 Table 1: Device summary Marking Package Packing 95P3LLH6 DPAK Tape and reel July 2016 DocID0.

STD95P3LLH6AG Features

* Order code VDS STD95P3LLH6AG -30 V RDS(on) max. 6.9 mΩ ID -80 A PTOT 104 W Figure 1: Internal schematic diagram D(2, TAB)

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate d

STD95P3LLH6AG-STMicroelectronics.pdf