STFW24N60M2 Datasheet - STMicroelectronics

STFW24N60M2 N-CHANNEL POWER MOSFET

These devices are N-channel Power MOSFETs developed using a new generation of MDmesh™ technology: MDmesh II Plus™ low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefo.

STFW24N60M2 Features

* 3 2 1 TO-220FP 123 I2PAKFP (TO-281) 1 3 2 1 TO-3PF Figure 1. Internal schematic diagram D(2) G(1) S(3) AM01476v1 Order codes VDS @ TJmax RDS(on) max ID STF24N60M2 STFI24N60M2 650 V 0.19 Ω 18 A STFW24N60M2

* Extremely low gate charge

* Lower RDS(on) x area vs previous gener

STFW24N60M2 Datasheet (508.63 KB)