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STN3P6F6 P-CHANNEL POWER MOSFET

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Description

STN3P6F6 P-channel -60 V, 0.13 Ω typ., -3 A STripFET™ F6 Power MOSFET in a SOT-223 package Datasheet - production data Figure 1: Internal schematic .
This device is a P-channel Power MOSFET developed using the STripFET™ F6 technology, with a new trench gate structure.

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Features

* Order code STN3P6F6 VDS -60 V RDS(on) max. 0.16 Ω ID -3 A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness

STN3P6F6 Distributors

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