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STP32N65M5 - N-channel MOSFET

General Description

These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout.

Key Features

  • TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested Package TO-220FP I2PAK TO-220 TO-247 AM01475v1_noZen.

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Full PDF Text Transcription (Reference)

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STF32N65M5, STI32N65M5 STP32N65M5, STW32N65M5 Datasheet N-channel 650 V, 95 mΩ typ., 24 A MDmesh™ M5 Power MOSFETs in TO-220FP, I²PAK, TO-220 and TO-247 packages Features TAB 3 12 TO-220FP ) TAB t(s 3 c 2 TO-220 1 rodu D(2, TAB) lete P G(1) roduct(s) - Obso S(3) I2PAK 1 2 3 3 12 TO-247 Order codes VDS at Tjmax. RDS(on) max. ID STF32N65M5 STI32N65M5 STP32N65M5 710 V 119 mΩ 24 A STW32N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested Package TO-220FP I2PAK TO-220 TO-247 AM01475v1_noZen Applications • Switching applications Description These devices are N-channel Power MOSFETs based on the MDmesh™ M5 innovative vertical process technology combined with the well-known PowerMESH™ horizontal layout.