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TIP122FP Datasheet - STMicroelectronics

TIP122FP Transistor

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. 3 2 1 TO-220FP Figure 1. Internal schematic diagrams NPN: R1 = 7 kΩ R2 = 7.

TIP122FP_STMicroelectronics.pdf

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