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TN1605H-6FP Datasheet - STMicroelectronics

SCRs

TN1605H-6FP Features

* High junction temperature: Tj = 150 °C

* High noise immunity dV/dt = 200 V/µs up to 150 °C

* Gate triggering current IGT = 6 mA

* Blocking voltage VDRM/VRRM = 600 V

* High turn on current rise dI/dt: 100 A/µs

* ECOPACK®2 compliant component

TN1605H-6FP General Description

Thanks to a junction temperature up to 150 °C and an insulated TO-220FPAB package, the TN1605H-6FP offers high thermal performance up to 16 A rms. The trade-off between the device's noise immunity (dV/dt = 200 V/µs), its gate triggering current (IGT = 6 mA) and its turn-on current rise (dI/dt = 100 .

TN1605H-6FP Datasheet (207.76 KB)

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TN1605H-6FP SCRs STMicroelectronics

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