U16NB50

STU16NB50

STMicroelectronics

U16NB50 General Description

Using the latest high voltage MESH OVERLAY™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avala.

U16NB50 Datasheet (50.21 KB)

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U16NB50

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STMicroelectronics ↗

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Stu16nb50.
STU16NB50 N-CHANNEL 600V - 0.45Ω - 10.7A - Max220 PowerMESH™ MOSFET PRELIMINARY DATA TYPE ST U16NB50 s s s s s s V DSS 500 V R DS(on) < 0.33 Ω ID 1.

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U16NB50 General Description

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